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FCP165N60E

FCP165N60E

For Reference Only

Part Number FCP165N60E
PNEDA Part # FCP165N60E
Description MOSFET N-CH 600V 23A TO220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,340
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCP165N60E Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCP165N60E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCP165N60E, FCP165N60E Datasheet (Total Pages: 10, Size: 802.23 KB)
PDFFCP165N60E Datasheet Cover
FCP165N60E Datasheet Page 2 FCP165N60E Datasheet Page 3 FCP165N60E Datasheet Page 4 FCP165N60E Datasheet Page 5 FCP165N60E Datasheet Page 6 FCP165N60E Datasheet Page 7 FCP165N60E Datasheet Page 8 FCP165N60E Datasheet Page 9 FCP165N60E Datasheet Page 10

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FCP165N60E Specifications

ManufacturerON Semiconductor
SeriesSuperFET® II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2434pF @ 380V
FET Feature-
Power Dissipation (Max)227W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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