Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN2400UFB-7

DMN2400UFB-7

For Reference Only

Part Number DMN2400UFB-7
PNEDA Part # DMN2400UFB-7
Description MOSFET N-CH 20V 750MA 3DFN
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 161,592
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN2400UFB-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN2400UFB-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN2400UFB-7, DMN2400UFB-7 Datasheet (Total Pages: 7, Size: 402.88 KB)
PDFDMN2400UFB-7 Datasheet Cover
DMN2400UFB-7 Datasheet Page 2 DMN2400UFB-7 Datasheet Page 3 DMN2400UFB-7 Datasheet Page 4 DMN2400UFB-7 Datasheet Page 5 DMN2400UFB-7 Datasheet Page 6 DMN2400UFB-7 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN2400UFB-7 Datasheet
  • where to find DMN2400UFB-7
  • Diodes Incorporated

  • Diodes Incorporated DMN2400UFB-7
  • DMN2400UFB-7 PDF Datasheet
  • DMN2400UFB-7 Stock

  • DMN2400UFB-7 Pinout
  • Datasheet DMN2400UFB-7
  • DMN2400UFB-7 Supplier

  • Diodes Incorporated Distributor
  • DMN2400UFB-7 Price
  • DMN2400UFB-7 Distributor

DMN2400UFB-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs550mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.5nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds36pF @ 16V
FET Feature-
Power Dissipation (Max)470mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-X1DFN1006
Package / Case3-XFDFN

The Products You May Be Interested In

STS9P3LLH6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ H6

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2615pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

NTMFS4833NST3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SENSEFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 156A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 11.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5250pF @ 12V

FET Feature

-

Power Dissipation (Max)

900mW (Ta), 86.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SO-8FL

Package / Case

8-PowerTDFN

IRLZ24NL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

60mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

480pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

BUK9Y12-55B,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

61.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

2880pF @ 25V

FET Feature

-

Power Dissipation (Max)

106W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

FCPF7N60YDTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

920pF @ 25V

FET Feature

-

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F-3 (Y-Forming)

Package / Case

TO-220-3 Full Pack, Formed Leads

Recently Sold

NTHD4102PT1G

NTHD4102PT1G

ON Semiconductor

MOSFET 2P-CH 20V 2.9A CHIPFET

VN10LP

VN10LP

Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3

RT0603DRD07200RL

RT0603DRD07200RL

Yageo

RES SMD 200 OHM 0.5% 1/10W 0603

DS1670E

DS1670E

Maxim Integrated

IC RTC SYSTEM CTRLR SER 20-TSSOP

NRVBS3200T3G

NRVBS3200T3G

ON Semiconductor

DIODE SCHOTTKY 200V 3A SMB

VLCF5020T-220MR75-1

VLCF5020T-220MR75-1

TDK

FIXED IND 22UH 750MA 496 MOHM

BLM18PG121SN1D

BLM18PG121SN1D

Murata

FERRITE BEAD 120 OHM 0603 1LN

74HC14DR2G

74HC14DR2G

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

XC95288XL-10TQ144C

XC95288XL-10TQ144C

Xilinx

IC CPLD 288MC 10NS 144TQFP

EDF1DS-E3/77

EDF1DS-E3/77

Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 200V 1A DFS

UUX1E470MCL1GS

UUX1E470MCL1GS

Nichicon

CAP ALUM 47UF 20% 25V SMD

WSL120600000ZEA9

WSL120600000ZEA9

Vishay Dale

RES 0 OHM JUMPER 1206