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STS9P3LLH6

STS9P3LLH6

For Reference Only

Part Number STS9P3LLH6
PNEDA Part # STS9P3LLH6
Description MOSFET PCH 30V 9A SO8
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,040
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STS9P3LLH6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTS9P3LLH6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STS9P3LLH6, STS9P3LLH6 Datasheet (Total Pages: 13, Size: 596.07 KB)
PDFSTS9P3LLH6 Datasheet Cover
STS9P3LLH6 Datasheet Page 2 STS9P3LLH6 Datasheet Page 3 STS9P3LLH6 Datasheet Page 4 STS9P3LLH6 Datasheet Page 5 STS9P3LLH6 Datasheet Page 6 STS9P3LLH6 Datasheet Page 7 STS9P3LLH6 Datasheet Page 8 STS9P3LLH6 Datasheet Page 9 STS9P3LLH6 Datasheet Page 10 STS9P3LLH6 Datasheet Page 11

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STS9P3LLH6 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ H6
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs15mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2615pF @ 25V
FET Feature-
Power Dissipation (Max)2.7W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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