CSD18535KTTT
For Reference Only
| Part Number | CSD18535KTTT |
| PNEDA Part # | CSD18535KTTT |
| Description | MOSFET N-CH 60V 200A TO-263 |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 26,784 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CSD18535KTTT Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD18535KTTT |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD18535KTTT Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Ta), 279A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 81nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6620pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DDPAK/TO-263-3 |
| Package / Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 51A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13.6mOhm @ 31A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1460pF @ 25V FET Feature - Power Dissipation (Max) 82W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 19A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 30V FET Feature - Power Dissipation (Max) 2.1W (Ta), 333W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
