Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

CMPDM202PH TR

CMPDM202PH TR

For Reference Only

Part Number CMPDM202PH TR
PNEDA Part # CMPDM202PH-TR
Description MOSFET P-CH 20V 2.3A SOT-23F
Manufacturer Central Semiconductor Corp
Unit Price Request a Quote
In Stock 8,226
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

CMPDM202PH TR Resources

Brand Central Semiconductor Corp
ECAD Module ECAD
Mfr. Part NumberCMPDM202PH TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • CMPDM202PH TR Datasheet
  • where to find CMPDM202PH TR
  • Central Semiconductor Corp

  • Central Semiconductor Corp CMPDM202PH TR
  • CMPDM202PH TR PDF Datasheet
  • CMPDM202PH TR Stock

  • CMPDM202PH TR Pinout
  • Datasheet CMPDM202PH TR
  • CMPDM202PH TR Supplier

  • Central Semiconductor Corp Distributor
  • CMPDM202PH TR Price
  • CMPDM202PH TR Distributor

CMPDM202PH TR Specifications

ManufacturerCentral Semiconductor Corp
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 5V
Rds On (Max) @ Id, Vgs88mOhm @ 1.2A, 5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
Vgs (Max)12V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 10V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23F
Package / CaseSOT-23-3 Flat Leads

The Products You May Be Interested In

NTTFS005N04CTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

17A (Ta), 69A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.6mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

3.5V @ 40µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

IRFB33N15DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

56mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2020pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 170W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

310mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.4V, 10V

Rds On (Max) @ Id, Vgs

5Ohm @ 300mA, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

30.5nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4840pF @ 12V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

TK8R2A06PL,S4X

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIX-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.4mOhm @ 8A, 4.5V

Vgs(th) (Max) @ Id

2.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs

28.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1990pF @ 25V

FET Feature

-

Power Dissipation (Max)

36W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

Recently Sold

FM25V02A-DG

FM25V02A-DG

Cypress Semiconductor

IC FRAM 256K SPI 40MHZ 8DFN

NCP708MU330TAG

NCP708MU330TAG

ON Semiconductor

IC REG LINEAR 3.3V 1A 6UDFN

1N4148-P-TR

1N4148-P-TR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 2A DO35

OD-850FHT

OD-850FHT

Opto Diode Corp

EMITTER IR 850NM 100MA TO-46

FDS6675

FDS6675

ON Semiconductor

MOSFET P-CH 30V 11A 8-SOIC

MAX16808AUI+

MAX16808AUI+

Maxim Integrated

IC LED DRVR WT/RGB BCKLT 28TSSOP

MC100LVEP14DTR2G

MC100LVEP14DTR2G

ON Semiconductor

IC CLK BUFFER 2:5 2.5GHZ 20TSSOP

DS5000-32-16+

DS5000-32-16+

Maxim Integrated

IC MCU 8BIT 32KB NVSRAM 40EDIP

DLW5BTN101SQ2L

DLW5BTN101SQ2L

Murata

CMC 6A 2LN 100 OHM SMD

BAS16

BAS16

Panasonic Electronic Components

DIODE GEN PURP 80V 200MA SC59-3

MT25QL256ABA8ESF-0SIT

MT25QL256ABA8ESF-0SIT

Micron Technology Inc.

IC FLASH 256M SPI 133MHZ 16SOP2

ATMEGA16-16AC

ATMEGA16-16AC

Microchip Technology

IC MCU 8BIT 16KB FLASH 44TQFP