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BYG20J-M3/TR3

BYG20J-M3/TR3

For Reference Only

Part Number BYG20J-M3/TR3
PNEDA Part # BYG20J-M3-TR3
Description DIODE AVALANCHE 600V 1.5A
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 5,778
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BYG20J-M3/TR3 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberBYG20J-M3/TR3
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
BYG20J-M3/TR3, BYG20J-M3/TR3 Datasheet (Total Pages: 5, Size: 97.09 KB)
PDFBYG20J/54 Datasheet Cover
BYG20J/54 Datasheet Page 2 BYG20J/54 Datasheet Page 3 BYG20J/54 Datasheet Page 4 BYG20J/54 Datasheet Page 5

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BYG20J-M3/TR3 Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeAvalanche
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)1.5A
Voltage - Forward (Vf) (Max) @ If1.4V @ 1.5A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)75ns
Current - Reverse Leakage @ Vr1µA @ 600V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C

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Diode Type

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Voltage - DC Reverse (Vr) (Max)

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Speed

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Vishay Semiconductor Diodes Division

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Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Speed

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Operating Temperature - Junction

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