SI7106DN-T1-E3
For Reference Only
| Part Number | SI7106DN-T1-E3 |
| PNEDA Part # | SI7106DN-T1-E3 |
| Description | MOSFET N-CH 20V 12.5A 1212-8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 2,934 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI7106DN-T1-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI7106DN-T1-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI7106DN-T1-E3 Datasheet
- where to find SI7106DN-T1-E3
- Vishay Siliconix
- Vishay Siliconix SI7106DN-T1-E3
- SI7106DN-T1-E3 PDF Datasheet
- SI7106DN-T1-E3 Stock
- SI7106DN-T1-E3 Pinout
- Datasheet SI7106DN-T1-E3
- SI7106DN-T1-E3 Supplier
- Vishay Siliconix Distributor
- SI7106DN-T1-E3 Price
- SI7106DN-T1-E3 Distributor
SI7106DN-T1-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 19.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 15V FET Feature - Power Dissipation (Max) 3.3W (Ta), 31.25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 15.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 270mOhm @ 7.75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 50V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 32A (Ta), 245A (Tc) Drive Voltage (Max Rds On, Min Rds On) 8V, 10V Rds On (Max) @ Id, Vgs 1.65mOhm @ 32A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 154nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8235pF @ 30V FET Feature - Power Dissipation (Max) 3.3W (Ta), 187W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package Power56 Package / Case 8-PowerTDFN |
Manufacturer STMicroelectronics Series Automotive, AEC-Q101, MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 816pF @ 50V FET Feature - Power Dissipation (Max) 90W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series SuperFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 70mOhm @ 23.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 25V FET Feature - Power Dissipation (Max) 417W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
