FQB8N60CFTM
For Reference Only
| Part Number | FQB8N60CFTM |
| PNEDA Part # | FQB8N60CFTM |
| Description | MOSFET N-CH 600V 6.26A D2PAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,434 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 19 - Apr 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FQB8N60CFTM Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FQB8N60CFTM |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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FQB8N60CFTM Specifications
| Manufacturer | ON Semiconductor |
| Series | FRFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 6.26A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 3.13A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1255pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 147W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263AB) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 13.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2220pF @ 25V FET Feature - Power Dissipation (Max) 160W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 5mOhm @ 50A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12500pF @ 20V FET Feature - Power Dissipation (Max) 1.75W (Ta), 90W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
