IPB120N06S403ATMA1
For Reference Only
| Part Number | IPB120N06S403ATMA1 |
| PNEDA Part # | IPB120N06S403ATMA1 |
| Description | MOSFET N-CH 60V 120A TO263-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,712 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPB120N06S403ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPB120N06S403ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPB120N06S403ATMA1 Datasheet
- where to find IPB120N06S403ATMA1
- Infineon Technologies
- Infineon Technologies IPB120N06S403ATMA1
- IPB120N06S403ATMA1 PDF Datasheet
- IPB120N06S403ATMA1 Stock
- IPB120N06S403ATMA1 Pinout
- Datasheet IPB120N06S403ATMA1
- IPB120N06S403ATMA1 Supplier
- Infineon Technologies Distributor
- IPB120N06S403ATMA1 Price
- IPB120N06S403ATMA1 Distributor
IPB120N06S403ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 120µA |
| Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13150pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 24A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 45mOhm @ 10A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 1140pF @ 25V FET Feature - Power Dissipation (Max) 1.36W (Ta), 62.5W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V Rds On (Max) @ Id, Vgs 500mOhm @ 2.3A, 13V Vgs(th) (Max) @ Id 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs 18.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 433pF @ 100V FET Feature Super Junction Power Dissipation (Max) - Operating Temperature - Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 38mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 25V FET Feature - Power Dissipation (Max) 3.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11mOhm @ 37A, 10V Vgs(th) (Max) @ Id 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1720pF @ 25V FET Feature - Power Dissipation (Max) 91W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 67mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 4.5V Vgs (Max) 12V Input Capacitance (Ciss) (Max) @ Vds 270pF @ 10V FET Feature - Power Dissipation (Max) 800mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TUMT3 Package / Case 3-SMD, Flat Leads |
