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BSP89L6327HTSA1

BSP89L6327HTSA1

For Reference Only

Part Number BSP89L6327HTSA1
PNEDA Part # BSP89L6327HTSA1
Description MOSFET N-CH 240V 350MA SOT-223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,132
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSP89L6327HTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSP89L6327HTSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSP89L6327HTSA1, BSP89L6327HTSA1 Datasheet (Total Pages: 8, Size: 582.65 KB)
PDFBSP89L6327HTSA1 Datasheet Cover
BSP89L6327HTSA1 Datasheet Page 2 BSP89L6327HTSA1 Datasheet Page 3 BSP89L6327HTSA1 Datasheet Page 4 BSP89L6327HTSA1 Datasheet Page 5 BSP89L6327HTSA1 Datasheet Page 6 BSP89L6327HTSA1 Datasheet Page 7 BSP89L6327HTSA1 Datasheet Page 8

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BSP89L6327HTSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)240V
Current - Continuous Drain (Id) @ 25°C350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id1.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs6.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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