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BSO615NGHUMA1

BSO615NGHUMA1

For Reference Only

Part Number BSO615NGHUMA1
PNEDA Part # BSO615NGHUMA1
Description MOSFET 2N-CH 60V 2.6A 8SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,986
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 18 - Apr 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSO615NGHUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSO615NGHUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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BSO615NGHUMA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C2.6A
Rds On (Max) @ Id, Vgs150mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds380pF @ 25V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device PackagePG-DSO-8

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