BSO615NGHUMA1
For Reference Only
| Part Number | BSO615NGHUMA1 |
| PNEDA Part # | BSO615NGHUMA1 |
| Description | MOSFET 2N-CH 60V 2.6A 8SOIC |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,986 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
BSO615NGHUMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | BSO615NGHUMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- BSO615NGHUMA1 Datasheet
- where to find BSO615NGHUMA1
- Infineon Technologies
- Infineon Technologies BSO615NGHUMA1
- BSO615NGHUMA1 PDF Datasheet
- BSO615NGHUMA1 Stock
- BSO615NGHUMA1 Pinout
- Datasheet BSO615NGHUMA1
- BSO615NGHUMA1 Supplier
- Infineon Technologies Distributor
- BSO615NGHUMA1 Price
- BSO615NGHUMA1 Distributor
BSO615NGHUMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.6A, 4.5V |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | PG-DSO-8 |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type 2 N-Channel (Dual) Common Drain FET Feature Standard Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 30.5A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs 3.5mOhm @ 7A, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 10V Power - Max 5.2W (Ta), 69.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8SCD Supplier Device Package PowerPAK® 1212-8SCD |
Manufacturer Diodes Incorporated Series - FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.7A, 3.2A Rds On (Max) @ Id, Vgs 40mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 713pF @ 10V Power - Max 1.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-UDFN Exposed Pad Supplier Device Package U-DFN2020-6 (Type B) |
Manufacturer Rohm Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Rds On (Max) @ Id, Vgs 325mOhm @ 2A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V Power - Max 1.1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package TSMT8 |
Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 16A Rds On (Max) @ Id, Vgs 61mOhm @ 16A, 10V Vgs(th) (Max) @ Id 3.5V @ 9µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V Power - Max 29W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount, Wettable Flank Package / Case 8-PowerVDFN Supplier Device Package PG-TDSON-8-10 |
Manufacturer Diodes Incorporated Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.1A, 3.4A Rds On (Max) @ Id, Vgs 50mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 12.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V Power - Max 1.25W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
