BSC097N06NSTATMA1
For Reference Only
| Part Number | BSC097N06NSTATMA1 |
| PNEDA Part # | BSC097N06NSTATMA1 |
| Description | DIFFERENTIATED MOSFETS |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 45,786 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
BSC097N06NSTATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | BSC097N06NSTATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- BSC097N06NSTATMA1 Datasheet
- where to find BSC097N06NSTATMA1
- Infineon Technologies
- Infineon Technologies BSC097N06NSTATMA1
- BSC097N06NSTATMA1 PDF Datasheet
- BSC097N06NSTATMA1 Stock
- BSC097N06NSTATMA1 Pinout
- Datasheet BSC097N06NSTATMA1
- BSC097N06NSTATMA1 Supplier
- Infineon Technologies Distributor
- BSC097N06NSTATMA1 Price
- BSC097N06NSTATMA1 Distributor
BSC097N06NSTATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 48A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 14µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1075pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 43W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8-1 |
| Package / Case | 8-PowerTDFN |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 9.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V FET Feature - Power Dissipation (Max) 42W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251AA Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 17A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.7mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta), 45W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-5 Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V Rds On (Max) @ Id, Vgs 215mOhm @ 1A, 4V Vgs(th) (Max) @ Id 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 240pF @ 10V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70FL/MCPH3 Package / Case 3-SMD, Flat Leads |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 220mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V Rds On (Max) @ Id, Vgs 1.6Ohm @ 50mA, 5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 58pF @ 25V FET Feature - Power Dissipation (Max) 350mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Infineon Technologies Series FETKY™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds - FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 2.5W (Tc) Operating Temperature - Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
