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STP33N65M2

STP33N65M2

For Reference Only

Part Number STP33N65M2
PNEDA Part # STP33N65M2
Description MOSFET N-CH 650V 24A TO220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 18,576
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP33N65M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP33N65M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP33N65M2, STP33N65M2 Datasheet (Total Pages: 23, Size: 794.63 KB)
PDFSTI33N65M2 Datasheet Cover
STI33N65M2 Datasheet Page 2 STI33N65M2 Datasheet Page 3 STI33N65M2 Datasheet Page 4 STI33N65M2 Datasheet Page 5 STI33N65M2 Datasheet Page 6 STI33N65M2 Datasheet Page 7 STI33N65M2 Datasheet Page 8 STI33N65M2 Datasheet Page 9 STI33N65M2 Datasheet Page 10 STI33N65M2 Datasheet Page 11

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STP33N65M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs140mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1790pF @ 100V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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