BR25L010FVT-WE2
For Reference Only
| Part Number | BR25L010FVT-WE2 |
| PNEDA Part # | BR25L010FVT-WE2 |
| Description | IC EEPROM 1K SPI 5MHZ 8TSSOP |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,204 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BR25L010FVT-WE2 Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | BR25L010FVT-WE2 |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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BR25L010FVT-WE2 Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | EEPROM |
| Technology | EEPROM |
| Memory Size | 1Kb (128 x 8) |
| Memory Interface | SPI |
| Clock Frequency | 5MHz |
| Write Cycle Time - Word, Page | 5ms |
| Access Time | - |
| Voltage - Supply | 1.8V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package | 8-TSSOP-B |
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Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology DRAM Memory Size 256Mb (16M x 16) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 1.7V ~ 1.95V Operating Temperature 0°C ~ 95°C (TC) Mounting Type Surface Mount Package / Case 144-TFBGA Supplier Device Package 144-µBGA (18.5x11) |
