N25Q064A13ESEH0E
For Reference Only
| Part Number | N25Q064A13ESEH0E |
| PNEDA Part # | N25Q064A13ESEH0E |
| Description | IC FLASH 64M SPI 108MHZ 8SO |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 8,334 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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N25Q064A13ESEH0E Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | N25Q064A13ESEH0E |
| Category | Semiconductors › Memory ICs › Memory |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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N25Q064A13ESEH0E Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 64Mb (16M x 4) |
| Memory Interface | SPI |
| Clock Frequency | 108MHz |
| Write Cycle Time - Word, Page | 8ms, 5ms |
| Access Time | - |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.209", 5.30mm Width) |
| Supplier Device Package | 8-SO W |
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Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile Memory Size 128Mb (4M x 32) Memory Interface Parallel Clock Frequency 133MHz Write Cycle Time - Word, Page - Access Time 6ns Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 90-TFBGA Supplier Device Package 90-TFBGA (8x13) |
