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BFP182WE6327HTSA1

BFP182WE6327HTSA1

For Reference Only

Part Number BFP182WE6327HTSA1
PNEDA Part # BFP182WE6327HTSA1
Description RF TRANS NPN 12V 8GHZ SOT343-4
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,680
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BFP182WE6327HTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBFP182WE6327HTSA1
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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BFP182WE6327HTSA1 Specifications

ManufacturerInfineon Technologies
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain22dB
Power - Max250mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 8V
Current - Collector (Ic) (Max)35mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-82A, SOT-343
Supplier Device PackagePG-SOT343-4

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

25 @ 50mA, 5V

Current - Collector (Ic) (Max)

250mA

Operating Temperature

175°C (TJ)

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Noise Figure (dB Typ @ f)

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

90 @ 30mA, 5V

Current - Collector (Ic) (Max)

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Operating Temperature

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

8GHz

Noise Figure (dB Typ @ f)

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Gain

22dB

Power - Max

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 10mA, 8V

Current - Collector (Ic) (Max)

35mA

Operating Temperature

150°C (TJ)

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TO-253-4, TO-253AA

Supplier Device Package

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Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

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Noise Figure (dB Typ @ f)

1.25dB @ 1.8GHz

Gain

15.5dB

Power - Max

450mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 15mA, 8V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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SOT-143R

Supplier Device Package

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NXP USA Inc.

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

65 @ 15mA, 10V

Current - Collector (Ic) (Max)

25mA

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

TO-236AB (SOT23)

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