Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

AUIRFZ44VZS

AUIRFZ44VZS

For Reference Only

Part Number AUIRFZ44VZS
PNEDA Part # AUIRFZ44VZS
Description MOSFET N-CH 60V 57A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,544
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AUIRFZ44VZS Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAUIRFZ44VZS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • AUIRFZ44VZS Datasheet
  • where to find AUIRFZ44VZS
  • Infineon Technologies

  • Infineon Technologies AUIRFZ44VZS
  • AUIRFZ44VZS PDF Datasheet
  • AUIRFZ44VZS Stock

  • AUIRFZ44VZS Pinout
  • Datasheet AUIRFZ44VZS
  • AUIRFZ44VZS Supplier

  • Infineon Technologies Distributor
  • AUIRFZ44VZS Price
  • AUIRFZ44VZS Distributor

AUIRFZ44VZS Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12mOhm @ 34A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1690pF @ 25V
FET Feature-
Power Dissipation (Max)92W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

DMN6070SY-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

85mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

588pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-89-3

Package / Case

TO-243AA

IRFS3507TRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

97A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.8mOhm @ 58A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3540pF @ 50V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

PMPB11EN,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14.5mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

840pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.7W (Ta), 12.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN2020MD-6

Package / Case

6-UDFN Exposed Pad

IPI086N10N3GXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

8.6mOhm @ 73A, 10V

Vgs(th) (Max) @ Id

3.5V @ 75µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3980pF @ 50V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

SUM50N06-16L-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1325pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 93W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

MAX232EWE

MAX232EWE

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SOIC

MA2SD2500L

MA2SD2500L

Panasonic Electronic Components

DIODE SCHOTTKY 15V 200MA SSMINI2

ADAU1761BCPZ

ADAU1761BCPZ

Analog Devices

IC SIGMADSP CODEC PLL 32LFCSP

DG212BDY

DG212BDY

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

NL453232T-3R3J-PF

NL453232T-3R3J-PF

TDK

FIXED IND 3.3UH 355MA 800 MOHM

PIC18F1220-I/SO

PIC18F1220-I/SO

Microchip Technology

IC MCU 8BIT 4KB FLASH 18SOIC

MC9S08LG16CLF

MC9S08LG16CLF

NXP

IC MCU 8BIT 18KB FLASH 48LQFP

NC7WZ16P6X

NC7WZ16P6X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6

BZT52C3V9-7-F

BZT52C3V9-7-F

Diodes Incorporated

DIODE ZENER 3.9V 500MW SOD123

IS42S16160J-6BLI

IS42S16160J-6BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

R5F21335CNFP#30

R5F21335CNFP#30

Renesas Electronics America

IC MCU 16BIT 24KB FLASH 32LQFP

76SB08ST

76SB08ST

Grayhill Inc.

SWITCH ROCKER DIP SPST 150MA 30V