SUM50N06-16L-E3
For Reference Only
| Part Number | SUM50N06-16L-E3 |
| PNEDA Part # | SUM50N06-16L-E3 |
| Description | MOSFET N-CH 60V 50A D2PAK |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 3,330 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SUM50N06-16L-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SUM50N06-16L-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SUM50N06-16L-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1325pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 93W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2Pak) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 75A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 11mOhm @ 37.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 92nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4370pF @ 25V FET Feature - Power Dissipation (Max) 2.4W (Ta), 214W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 10.4A (Ta), 65A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1308pF @ 12V FET Feature - Power Dissipation (Max) 1.28W (Ta), 50W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
