APTM10HM19FT3G
For Reference Only
| Part Number | APTM10HM19FT3G |
| PNEDA Part # | APTM10HM19FT3G |
| Description | MOSFET 4N-CH 100V 70A SP3 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 4,932 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APTM10HM19FT3G Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | APTM10HM19FT3G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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APTM10HM19FT3G Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| FET Type | 4 N-Channel (H-Bridge) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 70A |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 25V |
| Power - Max | 208W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Supplier Device Package | SP3 |
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