APTC90H12T1G

For Reference Only
Part Number | APTC90H12T1G |
PNEDA Part # | APTC90H12T1G |
Description | MOSFET 4N-CH 900V 30A SP1 |
Manufacturer | Microsemi |
Unit Price | Request a Quote |
In Stock | 8,784 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
APTC90H12T1G Resources
Brand | Microsemi |
ECAD Module |
![]() |
Mfr. Part Number | APTC90H12T1G |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Payment Method






- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode





- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- APTC90H12T1G Datasheet
- where to find APTC90H12T1G
- Microsemi
- Microsemi APTC90H12T1G
- APTC90H12T1G PDF Datasheet
- APTC90H12T1G Stock
- APTC90H12T1G Pinout
- Datasheet APTC90H12T1G
- APTC90H12T1G Supplier
- Microsemi Distributor
- APTC90H12T1G Price
- APTC90H12T1G Distributor
APTC90H12T1G Specifications
Manufacturer | Microsemi Corporation |
Series | CoolMOS™ |
FET Type | 4 N-Channel (H-Bridge) |
FET Feature | Super Junction |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 30A |
Rds On (Max) @ Id, Vgs | 120mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 100V |
Power - Max | 250W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP1 |
Supplier Device Package | SP1 |
The Products You May Be Interested In
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.7A Rds On (Max) @ Id, Vgs 110mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ |
Manufacturer Diodes Incorporated Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.1A Rds On (Max) @ Id, Vgs 155mOhm @ 2.1A, 4.5V Vgs(th) (Max) @ Id 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ |
Manufacturer Microsemi Corporation Series - FET Type 2 N-Channel (Half Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 34A Rds On (Max) @ Id, Vgs 348mOhm @ 17A, 10V Vgs(th) (Max) @ Id 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs 374nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 10300pF @ 25V Power - Max 780W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP4 Supplier Device Package SP4 |
Manufacturer Rohm Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 45V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 53mOhm @ 4A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 460pF @ 10V Power - Max 550mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package TSMT8 |