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APT33GF120B2RDQ2G

APT33GF120B2RDQ2G

For Reference Only

Part Number APT33GF120B2RDQ2G
PNEDA Part # APT33GF120B2RDQ2G
Description IGBT 1200V 64A 357W TMAX
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 4,284
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT33GF120B2RDQ2G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT33GF120B2RDQ2G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT33GF120B2RDQ2G Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)64A
Current - Collector Pulsed (Icm)75A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 25A
Power - Max357W
Switching Energy1.315mJ (on), 1.515mJ (off)
Input TypeStandard
Gate Charge170nC
Td (on/off) @ 25°C14ns/185ns
Test Condition800V, 25A, 4.3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device Package-

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

400V, 24A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Gate Charge

110nC

Td (on/off) @ 25°C

60ns/400ns

Test Condition

480V, 30A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXSH)

IRG4RC10KDTRPBF

Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

250µJ (on), 140µJ (off)

Input Type

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Gate Charge

19nC

Td (on/off) @ 25°C

49ns/97ns

Test Condition

480V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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