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APT33GF120B2RDQ2G

APT33GF120B2RDQ2G

For Reference Only

Part Number APT33GF120B2RDQ2G
PNEDA Part # APT33GF120B2RDQ2G
Description IGBT 1200V 64A 357W TMAX
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 4,284
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT33GF120B2RDQ2G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT33GF120B2RDQ2G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT33GF120B2RDQ2G Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)64A
Current - Collector Pulsed (Icm)75A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 25A
Power - Max357W
Switching Energy1.315mJ (on), 1.515mJ (off)
Input TypeStandard
Gate Charge170nC
Td (on/off) @ 25°C14ns/185ns
Test Condition800V, 25A, 4.3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device Package-

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Test Condition

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Reverse Recovery Time (trr)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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