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AIKW75N60CTE8188XKSA1

AIKW75N60CTE8188XKSA1

For Reference Only

Part Number AIKW75N60CTE8188XKSA1
PNEDA Part # AIKW75N60CTE8188XKSA1
Description IGBT 600V TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,814
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AIKW75N60CTE8188XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAIKW75N60CTE8188XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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AIKW75N60CTE8188XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, TrenchStop™
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)225A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 75A
Power - Max428W
Switching Energy2mJ (on), 2.5mJ (off)
Input TypeStandard
Gate Charge470nC
Td (on/off) @ 25°C33ns/330ns
Test Condition400V, 75A, 5Ohm, 15V
Reverse Recovery Time (trr)121ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3-41

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TrenchStop™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

1.53mJ (on), 850µJ (off)

Input Type

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Gate Charge

249nC

Td (on/off) @ 25°C

20ns/215ns

Test Condition

400V, 50A, 7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Supplier Device Package

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Manufacturer

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Series

TrenchStop®

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

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Power - Max

310W

Switching Energy

950µJ (off)

Input Type

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Gate Charge

211nC

Td (on/off) @ 25°C

-/387ns

Test Condition

600V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

IXYS

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

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Power - Max

190W

Switching Energy

640µJ (off)

Input Type

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Gate Charge

66nC

Td (on/off) @ 25°C

13ns/150ns

Test Condition

400V, 24A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Global Power Technologies Group

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1350V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

4.4mJ (on), 1.18mJ (off)

Input Type

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Gate Charge

300nC

Td (on/off) @ 25°C

30ns/145ns

Test Condition

600V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

450ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

16.5A

Current - Collector Pulsed (Icm)

27A

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 8A

Power - Max

125W

Switching Energy

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Input Type

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Gate Charge

70nC

Td (on/off) @ 25°C

27ns/440ns

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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