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APT30GS60BRDLG

APT30GS60BRDLG

For Reference Only

Part Number APT30GS60BRDLG
PNEDA Part # APT30GS60BRDLG
Description IGBT 600V 54A 250W TO247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 3,600
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT30GS60BRDLG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT30GS60BRDLG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT30GS60BRDLG Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)54A
Current - Collector Pulsed (Icm)113A
Vce(on) (Max) @ Vge, Ic3.15V @ 15V, 30A
Power - Max250W
Switching Energy570µJ (off)
Input TypeStandard
Gate Charge145nC
Td (on/off) @ 25°C16ns/360ns
Test Condition400V, 30A, 9.1Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Operating Temperature

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Supplier Device Package

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