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FGA30N60LSDTU

FGA30N60LSDTU

For Reference Only

Part Number FGA30N60LSDTU
PNEDA Part # FGA30N60LSDTU
Description IGBT 600V 60A 480W TO3PN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 11,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGA30N60LSDTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGA30N60LSDTU
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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FGA30N60LSDTU Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)90A
Vce(on) (Max) @ Vge, Ic1.4V @ 15V, 30A
Power - Max480W
Switching Energy1.1mJ (on), 21mJ (off)
Input TypeStandard
Gate Charge225nC
Td (on/off) @ 25°C18ns/250ns
Test Condition400V, 30A, 6.8Ohm, 15V
Reverse Recovery Time (trr)35ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Series

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Manufacturer

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Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 60A

Power - Max

416W

Switching Energy

2.1mJ (on), 1.13mJ (off)

Input Type

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Gate Charge

375nC

Td (on/off) @ 25°C

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Test Condition

400V, 60A, 6Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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