APT1204R7KFLLG
For Reference Only
| Part Number | APT1204R7KFLLG |
| PNEDA Part # | APT1204R7KFLLG |
| Description | MOSFET N-CH 1200V 3.5A TO-220 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 2,700 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APT1204R7KFLLG Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | APT1204R7KFLLG |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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APT1204R7KFLLG Specifications
| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 7® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.7Ohm @ 1.75A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 715pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 [K] |
| Package / Case | TO-220-3 |
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.3mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 142nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11659pF @ 25V FET Feature - Power Dissipation (Max) 333W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 45A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9.4mOhm @ 45A, 10V Vgs(th) (Max) @ Id 4V @ 34µA Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3785pF @ 25V FET Feature - Power Dissipation (Max) 71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
