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SIS626DN-T1-GE3

SIS626DN-T1-GE3

For Reference Only

Part Number SIS626DN-T1-GE3
PNEDA Part # SIS626DN-T1-GE3
Description MOSFET N-CH 25V 16A POWERPAK1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,718
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS626DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS626DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS626DN-T1-GE3, SIS626DN-T1-GE3 Datasheet (Total Pages: 13, Size: 615.59 KB)
PDFSIS626DN-T1-GE3 Datasheet Cover
SIS626DN-T1-GE3 Datasheet Page 2 SIS626DN-T1-GE3 Datasheet Page 3 SIS626DN-T1-GE3 Datasheet Page 4 SIS626DN-T1-GE3 Datasheet Page 5 SIS626DN-T1-GE3 Datasheet Page 6 SIS626DN-T1-GE3 Datasheet Page 7 SIS626DN-T1-GE3 Datasheet Page 8 SIS626DN-T1-GE3 Datasheet Page 9 SIS626DN-T1-GE3 Datasheet Page 10 SIS626DN-T1-GE3 Datasheet Page 11

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SIS626DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1925pF @ 15V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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