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NVD4810NT4G-TB01

NVD4810NT4G-TB01

For Reference Only

Part Number NVD4810NT4G-TB01
PNEDA Part # NVD4810NT4G-TB01
Description MOSFET N-CH 30V 54A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,038
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVD4810NT4G-TB01 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVD4810NT4G-TB01
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVD4810NT4G-TB01, NVD4810NT4G-TB01 Datasheet (Total Pages: 7, Size: 81.06 KB)
PDFNVD4810NT4G-TB01 Datasheet Cover
NVD4810NT4G-TB01 Datasheet Page 2 NVD4810NT4G-TB01 Datasheet Page 3 NVD4810NT4G-TB01 Datasheet Page 4 NVD4810NT4G-TB01 Datasheet Page 5 NVD4810NT4G-TB01 Datasheet Page 6 NVD4810NT4G-TB01 Datasheet Page 7

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NVD4810NT4G-TB01 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 11.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1350pF @ 12V
FET Feature-
Power Dissipation (Max)1.4W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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