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SQ1421EDH-T1_GE3

SQ1421EDH-T1_GE3

For Reference Only

Part Number SQ1421EDH-T1_GE3
PNEDA Part # SQ1421EDH-T1_GE3
Description MOSFET P-CH 60V 1.6A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,204
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ1421EDH-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ1421EDH-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQ1421EDH-T1_GE3, SQ1421EDH-T1_GE3 Datasheet (Total Pages: 9, Size: 200.4 KB)
PDFSQ1421EDH-T1_GE3 Datasheet Cover
SQ1421EDH-T1_GE3 Datasheet Page 2 SQ1421EDH-T1_GE3 Datasheet Page 3 SQ1421EDH-T1_GE3 Datasheet Page 4 SQ1421EDH-T1_GE3 Datasheet Page 5 SQ1421EDH-T1_GE3 Datasheet Page 6 SQ1421EDH-T1_GE3 Datasheet Page 7 SQ1421EDH-T1_GE3 Datasheet Page 8 SQ1421EDH-T1_GE3 Datasheet Page 9

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SQ1421EDH-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs290mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.4nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds355pF @ 25V
FET Feature-
Power Dissipation (Max)3.3W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-6 (SOT-363)
Package / Case6-TSSOP, SC-88, SOT-363

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