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AIKW50N65DH5XKSA1

AIKW50N65DH5XKSA1

For Reference Only

Part Number AIKW50N65DH5XKSA1
PNEDA Part # AIKW50N65DH5XKSA1
Description IC DISCRETE 650V TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,296
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 23 - Mar 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AIKW50N65DH5XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAIKW50N65DH5XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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AIKW50N65DH5XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, Trenchstop™ 5
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Power - Max270W
Switching Energy490µJ (on), 140µJ (off)
Input TypeStandard
Gate Charge1018nC
Td (on/off) @ 25°C21ns/156ns
Test Condition400V, 25A, 12Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3-41

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

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Operating Temperature

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

PG-TO247-3

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Series

GenX3™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Td (on/off) @ 25°C

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