64010H
![64010H](http://pneda.ltd/static/products/images_mk/395/64010H.webp)
For Reference Only
Part Number | 64010H |
PNEDA Part # | 64010H |
Description | RF POWER TRANSISTOR |
Manufacturer | Microsemi |
Unit Price | Request a Quote |
In Stock | 6,156 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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64010H Resources
Brand | Microsemi |
ECAD Module |
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Mfr. Part Number | 64010H |
Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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- Some orders may require a minimum amount of $100.00.
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- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- Orders cannot be canceled after shipping the packages.
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64010H Specifications
Manufacturer | Microsemi Corporation |
Series | - |
Transistor Type | - |
Voltage - Collector Emitter Breakdown (Max) | - |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | - |
Gain | - |
Power - Max | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | - |
Current - Collector (Ic) (Max) | - |
Operating Temperature | - |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
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Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 28V Frequency - Transition 470MHz ~ 860MHz Noise Figure (dB Typ @ f) - Gain 9dB ~ 10dB Power - Max 65W DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 500mA, 5V Current - Collector (Ic) (Max) 2.5A Operating Temperature 200°C (TJ) Mounting Type Channel, DIN Rail Mount Package / Case 55JV Supplier Device Package 55JV |