MS2211
For Reference Only
| Part Number | MS2211 |
| PNEDA Part # | MS2211 |
| Description | RF TRANS NPN 48V 1.215GHZ M222 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 7,632 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 6 - Apr 11 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MS2211 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | MS2211 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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- It may take up to 24 hours before carriers display the info.
Notes
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MS2211 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 48V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | 9.3dB |
| Power - Max | 25W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 250mA, 5V |
| Current - Collector (Ic) (Max) | 900mA |
| Operating Temperature | 250°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | M222 |
| Supplier Device Package | M222 |
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Manufacturer Broadcom Limited Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 5.5V Frequency - Transition - Noise Figure (dB Typ @ f) 1.1dB ~ 1.4dB @ 900MHz Gain 11dB ~ 13dB Power - Max 100mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA, 2.7V Current - Collector (Ic) (Max) 8mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain 18.5dB Power - Max 450mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 15mA, 8V Current - Collector (Ic) (Max) 65mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package PG-SOT323-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 10GHz Noise Figure (dB Typ @ f) 1.2dB @ 1GHz Gain 17dB Power - Max 450mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 50mA, 5V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-343F Supplier Device Package 4-MCPH |
