Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2SK3704

2SK3704

For Reference Only

Part Number 2SK3704
PNEDA Part # 2SK3704
Description MOSFET N-CH 60V 45A TO-220ML
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,938
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK3704 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part Number2SK3704
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SK3704, 2SK3704 Datasheet (Total Pages: 4, Size: 56.02 KB)
PDF2SK3704 Datasheet Cover
2SK3704 Datasheet Page 2 2SK3704 Datasheet Page 3 2SK3704 Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2SK3704 Datasheet
  • where to find 2SK3704
  • ON Semiconductor

  • ON Semiconductor 2SK3704
  • 2SK3704 PDF Datasheet
  • 2SK3704 Stock

  • 2SK3704 Pinout
  • Datasheet 2SK3704
  • 2SK3704 Supplier

  • ON Semiconductor Distributor
  • 2SK3704 Price
  • 2SK3704 Distributor

2SK3704 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs14mOhm @ 23A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs67nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3500pF @ 20V
FET Feature-
Power Dissipation (Max)2W (Ta), 30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220ML
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

IRFP048NPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

64A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

16mOhm @ 37A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

89nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

67nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3080pF @ 25V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRF3709S

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2672pF @ 16V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 120W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDFMA2P029Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

95mOhm @ 3.1A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

720pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.4W (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-MicroFET (2x2)

Package / Case

6-VDFN Exposed Pad

NTP13N10

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

13A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

165mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

550pF @ 25V

FET Feature

-

Power Dissipation (Max)

64.7W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

MAX890LESA+T

MAX890LESA+T

Maxim Integrated

IC SW MOSFET PUR PCH HSIDE 8SOIC

IRFHM792TRPBF

IRFHM792TRPBF

Infineon Technologies

MOSFET 2N-CH 100V 2.3A 8PQFN

FT4232HL-REEL

FT4232HL-REEL

FTDI, Future Technology Devices International Ltd

IC USB HS QUAD UART/SYNC 64-LQFP

HSMS-2820-TR1G

HSMS-2820-TR1G

Broadcom

RF DIODE SCHOTTKY 15V SOT23-3

BC817-16

BC817-16

Diodes Incorporated

TRANS NPN 45V 0.8A SOT23-3

1SMB5931BT3G

1SMB5931BT3G

ON Semiconductor

DIODE ZENER 18V 550MW SMB

BC81725MTF

BC81725MTF

ON Semiconductor

TRANS NPN 45V 0.8A SOT-23

CAT93C57XI

CAT93C57XI

ON Semiconductor

IC EEPROM 2K SPI 1MHZ 8SOIC

IHLP2525CZERR20M01

IHLP2525CZERR20M01

Vishay Dale

FIXED IND 200NH 24A 3 MOHM SMD

MC9S12C128CFUE

MC9S12C128CFUE

NXP

IC MCU 16BIT 128KB FLASH 80QFP

SMBJ15A-13-F

SMBJ15A-13-F

Diodes Incorporated

TVS DIODE 15V 24.4V SMB

PCF8566T/1,118

PCF8566T/1,118

NXP

IC LCD DVR UNVRSL LOW-MUX 40VSOP