Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2SK3462(TE16L1,NQ)

2SK3462(TE16L1,NQ)

For Reference Only

Part Number 2SK3462(TE16L1,NQ)
PNEDA Part # 2SK3462-TE16L1-NQ
Description MOSFET N-CH 250V 3A PW-MOLD
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,354
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK3462(TE16L1 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SK3462(TE16L1,NQ)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SK3462(TE16L1, 2SK3462(TE16L1 Datasheet (Total Pages: 6, Size: 180.04 KB)
PDF2SK3462(TE16L1 Datasheet Cover
2SK3462(TE16L1 Datasheet Page 2 2SK3462(TE16L1 Datasheet Page 3 2SK3462(TE16L1 Datasheet Page 4 2SK3462(TE16L1 Datasheet Page 5 2SK3462(TE16L1 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2SK3462(TE16L1,NQ) Datasheet
  • where to find 2SK3462(TE16L1,NQ)
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage 2SK3462(TE16L1,NQ)
  • 2SK3462(TE16L1,NQ) PDF Datasheet
  • 2SK3462(TE16L1,NQ) Stock

  • 2SK3462(TE16L1,NQ) Pinout
  • Datasheet 2SK3462(TE16L1,NQ)
  • 2SK3462(TE16L1,NQ) Supplier

  • Toshiba Semiconductor and Storage Distributor
  • 2SK3462(TE16L1,NQ) Price
  • 2SK3462(TE16L1,NQ) Distributor

2SK3462(TE16L1 Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.7Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds267pF @ 10V
FET Feature-
Power Dissipation (Max)20W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePW-MOLD
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

FDY101PZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

150mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

8Ohm @ 150mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 10V

FET Feature

-

Power Dissipation (Max)

625mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-3

Package / Case

SC-89, SOT-490

IXTA6N50P

IXYS

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.1Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

14.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

740pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

41A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

34mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

3573pF @ 25V

FET Feature

-

Power Dissipation (Max)

149W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRL2910L

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

26mOhm @ 29A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3700pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

NDT014L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

160mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

214pF @ 30V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223-4

Package / Case

TO-261-4, TO-261AA

Recently Sold

CDBA540-HF

CDBA540-HF

Comchip Technology

DIODE SCHOTTKY 40V 5A DO214AC

AT89S52-24PU

AT89S52-24PU

Microchip Technology

IC MCU 8BIT 8KB FLASH 40DIP

SRP5030T-4R7M

SRP5030T-4R7M

Bourns

FIXED IND 4.7UH 4.6A 53 MOHM SMD

76SB08ST

76SB08ST

Grayhill Inc.

SWITCH ROCKER DIP SPST 150MA 30V

DECB33J681KC4B

DECB33J681KC4B

Murata

CAP CER 680PF 6.3KV RADIAL

M24256-BRMN6TP

M24256-BRMN6TP

STMicroelectronics

IC EEPROM 256K I2C 1MHZ 8SO

MD2369A

MD2369A

Central Semiconductor Corp

TRANS 2NPN 40V 0.5A TO-78

LT1167ACS8#PBF

LT1167ACS8#PBF

Linear Technology/Analog Devices

IC INST AMP 1 CIRCUIT 8SO

SSM2305RMZ-R2

SSM2305RMZ-R2

Analog Devices

IC AMP AUDIO 2.8W MONO D 8MSOP

ILBB0805ER110V

ILBB0805ER110V

Vishay Dale

FERRITE BEAD 11 OHM 0805 1LN

DS3232SN#T&R

DS3232SN#T&R

Maxim Integrated

IC RTC CLK/CALENDAR I2C 20-SOIC

AT93C57W-10SC

AT93C57W-10SC

Microchip Technology

IC EEPROM 2K SPI 2MHZ 8SOIC