IXFR26N60Q
![IXFR26N60Q](http://pneda.ltd/static/products/images_mk/400/IXFR26N60Q.webp)
For Reference Only
Part Number | IXFR26N60Q |
PNEDA Part # | IXFR26N60Q |
Description | MOSFET N-CH 600V 23A ISOPLUS247 |
Manufacturer | IXYS |
Unit Price | Request a Quote |
In Stock | 4,788 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
IXFR26N60Q Resources
Brand | IXYS |
ECAD Module |
![]() |
Mfr. Part Number | IXFR26N60Q |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
![TT](/res/v2/images/help/p-tt.gif )
![Unionpay](/res/v2/images/help/p-unionpay.gif )
![paypal](/res/v2/images/help/p-paypal.gif )
![paypalwtcreditcard](/res/v2/images/help/p-paypalwtcreditcard.gif )
![alipay](/res/v2/images/help/p-alipay.gif )
![wu](/res/v2/images/help/p-wu.gif )
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
![TNT](/res/v2/images/help/s-tnt.gif )
![UPS](/res/v2/images/help/s-ups.gif )
![Fedex](/res/v2/images/help/s-fedex.gif )
![EMS](/res/v2/images/help/s-ems.gif )
![DHL](/res/v2/images/help/s-dhl.gif )
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXFR26N60Q Datasheet
- where to find IXFR26N60Q
- IXYS
- IXYS IXFR26N60Q
- IXFR26N60Q PDF Datasheet
- IXFR26N60Q Stock
- IXFR26N60Q Pinout
- Datasheet IXFR26N60Q
- IXFR26N60Q Supplier
- IXYS Distributor
- IXFR26N60Q Price
- IXFR26N60Q Distributor
IXFR26N60Q Specifications
Manufacturer | IXYS |
Series | HiPerFET™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 250mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 310W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | ISOPLUS247™ |
Package / Case | ISOPLUS247™ |
The Products You May Be Interested In
Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12.2mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id 4V @ 300µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 40V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220SIS Package / Case TO-220-3 Full Pack |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 2.1A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 310mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 50V FET Feature - Power Dissipation (Max) 3W (Ta), 110W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerFlat™ (8x8) HV Package / Case 8-PowerVDFN |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 266mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 262pF @ 20V FET Feature - Power Dissipation (Max) 3.5W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-89/PCP-1 Package / Case TO-243AA |
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 1.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 105.4nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 15010pF @ 25V FET Feature - Power Dissipation (Max) 324W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer STMicroelectronics Series STripFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4mOhm @ 60A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6750pF @ 25V FET Feature - Power Dissipation (Max) 330W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |