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2SJ690-T1B-AT

2SJ690-T1B-AT

For Reference Only

Part Number 2SJ690-T1B-AT
PNEDA Part # 2SJ690-T1B-AT
Description MOSFET P-CH 30V TSMT
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 7,812
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SJ690-T1B-AT Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part Number2SJ690-T1B-AT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SJ690-T1B-AT, 2SJ690-T1B-AT Datasheet (Total Pages: 8, Size: 254 KB)
PDF2SJ690-T1B-AT Datasheet Cover
2SJ690-T1B-AT Datasheet Page 2 2SJ690-T1B-AT Datasheet Page 3 2SJ690-T1B-AT Datasheet Page 4 2SJ690-T1B-AT Datasheet Page 5 2SJ690-T1B-AT Datasheet Page 6 2SJ690-T1B-AT Datasheet Page 7 2SJ690-T1B-AT Datasheet Page 8

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2SJ690-T1B-AT Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs119mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs5.2nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds450pF @ 10V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageSC-96-3, Thin Mini Mold
Package / CaseSC-96

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