2SJ690-T1B-AT Datasheet
2SJ690-T1B-AT Datasheet
Total Pages: 8
Size: 254 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
2SJ690-T1B-AT
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Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 119mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 450pF @ 10V FET Feature - Power Dissipation (Max) 200mW (Ta) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package SC-96-3, Thin Mini Mold Package / Case SC-96 |
