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2SJ687-ZK-E1-AY

2SJ687-ZK-E1-AY

For Reference Only

Part Number 2SJ687-ZK-E1-AY
PNEDA Part # 2SJ687-ZK-E1-AY
Description MOSFET P-CH 20V 20A TO-252
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 4,158
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SJ687-ZK-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part Number2SJ687-ZK-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SJ687-ZK-E1-AY, 2SJ687-ZK-E1-AY Datasheet (Total Pages: 10, Size: 270.54 KB)
PDF2SJ687-ZK-E1-AY Datasheet Cover
2SJ687-ZK-E1-AY Datasheet Page 2 2SJ687-ZK-E1-AY Datasheet Page 3 2SJ687-ZK-E1-AY Datasheet Page 4 2SJ687-ZK-E1-AY Datasheet Page 5 2SJ687-ZK-E1-AY Datasheet Page 6 2SJ687-ZK-E1-AY Datasheet Page 7 2SJ687-ZK-E1-AY Datasheet Page 8 2SJ687-ZK-E1-AY Datasheet Page 9 2SJ687-ZK-E1-AY Datasheet Page 10

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2SJ687-ZK-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs7mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs57nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds4400pF @ 10V
FET Feature-
Power Dissipation (Max)1W (Ta), 36W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (MP-3ZK)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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