2SJ687-ZK-E1-AY Datasheet
2SJ687-ZK-E1-AY Datasheet
Total Pages: 10
Size: 270.54 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
2SJ687-ZK-E1-AY
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Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 7mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 57nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 10V FET Feature - Power Dissipation (Max) 1W (Ta), 36W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 (MP-3ZK) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
