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2SB906-Y(TE16L1,NQ

2SB906-Y(TE16L1,NQ

For Reference Only

Part Number 2SB906-Y(TE16L1,NQ
PNEDA Part # 2SB906-Y-TE16L1-NQ
Description TRANS PNP 60V 3A PW-MOLD
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 3,726
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SB906-Y(TE16L1 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SB906-Y(TE16L1,NQ
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
2SB906-Y(TE16L1, 2SB906-Y(TE16L1 Datasheet (Total Pages: 4, Size: 153.87 KB)
PDF2SB906-Y(TE16L1 Datasheet Cover
2SB906-Y(TE16L1 Datasheet Page 2 2SB906-Y(TE16L1 Datasheet Page 3 2SB906-Y(TE16L1 Datasheet Page 4

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2SB906-Y(TE16L1 Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)3A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.7V @ 300mA, 3A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 5V
Power - Max1W
Frequency - Transition9MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePW-MOLD

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