2SB906-Y(TE16L1 Datasheet
2SB906-Y(TE16L1 Datasheet
Total Pages: 4
Size: 153.87 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
2SB906-Y(TE16L1,NQ
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 1.7V @ 300mA, 3A Current - Collector Cutoff (Max) 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 5V Power - Max 1W Frequency - Transition 9MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package PW-MOLD |
