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2N5460G

2N5460G

For Reference Only

Part Number 2N5460G
PNEDA Part # 2N5460G
Description JFET P-CH 40V 0.35W TO92
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,930
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 1 - Apr 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2N5460G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part Number2N5460G
CategorySemiconductorsTransistorsTransistors - JFETs
Datasheet
2N5460G, 2N5460G Datasheet (Total Pages: 5, Size: 60.19 KB)
PDF2N5462 Datasheet Cover
2N5462 Datasheet Page 2 2N5462 Datasheet Page 3 2N5462 Datasheet Page 4 2N5462 Datasheet Page 5

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2N5460G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
Voltage - Breakdown (V(BR)GSS)40V
Drain to Source Voltage (Vdss)-
Current - Drain (Idss) @ Vds (Vgs=0)1mA @ 15V
Current Drain (Id) - Max-
Voltage - Cutoff (VGS off) @ Id750mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds7pF @ 15V
Resistance - RDS(On)-
Power - Max350mW
Operating Temperature-65°C ~ 135°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3

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Series

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FET Type

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Voltage - Breakdown (V(BR)GSS)

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Drain to Source Voltage (Vdss)

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Current - Drain (Idss) @ Vds (Vgs=0)

2mA @ 15V

Current Drain (Id) - Max

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Voltage - Cutoff (VGS off) @ Id

1V @ 10nA

Input Capacitance (Ciss) (Max) @ Vds

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Resistance - RDS(On)

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Power - Max

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Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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FET Type

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Voltage - Breakdown (V(BR)GSS)

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Drain to Source Voltage (Vdss)

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Current - Drain (Idss) @ Vds (Vgs=0)

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Current Drain (Id) - Max

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Voltage - Cutoff (VGS off) @ Id

1V @ 1µA

Input Capacitance (Ciss) (Max) @ Vds

5pF @ 10V

Resistance - RDS(On)

50 Ohms

Power - Max

250mW

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150°C (TJ)

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Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23 (TO-236AB)

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Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

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FET Type

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Voltage - Breakdown (V(BR)GSS)

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Drain to Source Voltage (Vdss)

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Current - Drain (Idss) @ Vds (Vgs=0)

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Current Drain (Id) - Max

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Vishay Siliconix

Manufacturer

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Series

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FET Type

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Voltage - Breakdown (V(BR)GSS)

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Drain to Source Voltage (Vdss)

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Current - Drain (Idss) @ Vds (Vgs=0)

500µA @ 15V

Current Drain (Id) - Max

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Voltage - Cutoff (VGS off) @ Id

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Input Capacitance (Ciss) (Max) @ Vds

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Resistance - RDS(On)

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Operating Temperature

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Manufacturer

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Series

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FET Type

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Voltage - Breakdown (V(BR)GSS)

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Drain to Source Voltage (Vdss)

30V

Current - Drain (Idss) @ Vds (Vgs=0)

1.2mA @ 10V

Current Drain (Id) - Max

10mA

Voltage - Cutoff (VGS off) @ Id

180mV @ 1µA

Input Capacitance (Ciss) (Max) @ Vds

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Resistance - RDS(On)

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Power - Max

200mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

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