Microsemi Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerMicrosemi Corporation
Records 611
Page 2/21
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
MOSFET N-CH 1000V 37A T-MAX |
452 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 37A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 9835pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
|
|
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Microsemi |
MOSFET N-CH 1000V 14A TO-247 |
4,032 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 14A (Tc) | 10V | 780mOhm @ 7A, 10V | 5V @ 1mA | 95nC @ 10V | ±30V | 2525pF @ 25V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
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|
Microsemi |
MOSFET N-CH 1200V 29A TO264 |
5,958 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 29A (Tc) | 10V | 530mOhm @ 14A, 10V | 5V @ 2.5mA | 300nC @ 10V | ±30V | 9670pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
|
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Microsemi |
MOSFET N-CH 600V 94A TO264 |
6,606 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 94A (Tc) | 10V | 35mOhm @ 60A, 10V | 3.9V @ 5.4mA | 640nC @ 10V | ±20V | 13600pF @ 25V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 264 MAX™ [L2] | TO-264-3, TO-264AA |
|
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|
Microsemi |
MOSFET N-CH 500V 41A SOT-227 |
7,938 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 41A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 96nC @ 10V | ±30V | 4360pF @ 25V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
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|
Microsemi |
MOSFET N-CH 800V 33A SOT-227 |
5,166 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 800V | 33A (Tc) | 10V | 200mOhm @ 16.5A, 10V | 5V @ 2.5mA | 195nC @ 10V | ±30V | 5200pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
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|
Microsemi |
GEN2 SIC MOSFET 700V 90MOHM TO-2 |
7,830 |
|
- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 700V | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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|
Microsemi |
GEN2 SIC MOSFET 700V 90MOHM D3PA |
6,084 |
|
- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 700V | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
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|
Microsemi |
GEN2 SIC MOSFET 700V 15MOHM TO-2 |
6,432 |
|
- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 700V | 131A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 1mA | 215nC @ 20V | +25V, -10V | 4500pF @ 700V | - | 400W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 600V 30A TO-247 |
7,758 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 88nC @ 10V | ±20V | 2267pF @ 25V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
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|
Microsemi |
MOSFET N-CH 1200V 24A T-MAX |
8,694 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 24A (Tc) | 10V | 630mOhm @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8370pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
|
|
|
Microsemi |
MOSFET N-CH 600V 70A TO-247 |
7,398 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330nC @ 10V | ±30V | 13190pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
|
|
|
Microsemi |
MOSFET N-CH 800V 31A T-MAX |
8,370 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 800V | 31A (Tc) | 10V | 240mOhm @ 15.5A, 10V | 5V @ 2.5mA | 160nC @ 10V | ±30V | 4670pF @ 25V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
|
|
|
Microsemi |
MOSFET N-CH 600V 31A SOT-227 |
6,768 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215nC @ 10V | ±30V | 8590pF @ 25V | - | 355W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
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Microsemi |
MOSFET N-CH 500V 51A SOT-227 |
8,532 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 51A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290nC @ 10V | ±30V | 11600pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
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Microsemi |
MOSFET N-CH 1000V 21A SOT-227 |
8,154 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 21A (Tc) | 10V | 380mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8500pF @ 25V | - | 462W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
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|
Microsemi |
MOSFET N-CH 1200V 32A SOT227 |
8,874 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1200V | 32A (Tc) | 20V | 100mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | +25V, -10V | 2560pF @ 1000V | - | 165W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
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|
Microsemi |
MOSFET N-CH 600V 49A SOT-227 |
8,982 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 49A (Tc) | 10V | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330nC @ 10V | ±30V | 13190pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
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|
Microsemi |
MOSFET N-CH 500V 44A SOT227 |
6,030 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 100mOhm @ 22A, 10V | 4V @ 2.5mA | 312nC @ 10V | ±30V | 7410pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
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|
Microsemi |
MOSFET N-CH 1000V 20A SP1 |
3,942 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 20A (Tc) | 10V | 720mOhm @ 10A, 10V | 4V @ 2.5mA | - | ±30V | 6000pF @ 25V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
|
Microsemi |
MOSFET N-CH 500V 497A SP6 |
4,302 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 497A (Tc) | 10V | 10mOhm @ 248.5A, 10V | 5V @ 30mA | 1200nC @ 10V | ±30V | 63300pF @ 25V | - | 5000W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
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|
Microsemi |
MOSFET N-CH 800V 57A SOT-227 |
2,124 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 57A (Tc) | 10V | 110mOhm @ 43A, 10V | 5V @ 5mA | 570nC @ 10V | ±30V | 17550pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 1000V 30A T-MAX |
2,106 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 30A (Tc) | 10V | 440mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8500pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
|
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|
Microsemi |
MOSFET N-CH 800V 11A TO-247 |
8,208 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 60nC @ 10V | ±20V | 1585pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 500V 24A TO-247 |
4,752 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 240mOhm @ 11A, 10V | 5V @ 1mA | 90nC @ 10V | ±30V | 3630pF @ 25V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 500V 30A TO-247 |
5,940 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 190mOhm @ 14A, 10V | 5V @ 1mA | 115nC @ 10V | ±30V | 4525pF @ 25V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 1200V 7A TO-247 |
6,084 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1200V | 7A (Tc) | 10V | 2.9Ohm @ 3A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 2565pF @ 25V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 1000V 17A TO-247 |
6,948 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 17A (Tc) | 10V | 800mOhm @ 9A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 4845pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 1200V 14A TO-247 |
4,122 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1200V | 14A (Tc) | 10V | 1.2Ohm @ 7A, 10V | 5V @ 1mA | 145nC @ 10V | ±30V | 4765pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 600V 47A TO-247 |
6,516 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260nC @ 10V | ±20V | 7015pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |