Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APT5010JLLU2

APT5010JLLU2

For Reference Only

Part Number APT5010JLLU2
PNEDA Part # APT5010JLLU2
Description MOSFET N-CH 500V 41A SOT-227
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 7,938
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 17 - Apr 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT5010JLLU2 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT5010JLLU2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • APT5010JLLU2 Datasheet
  • where to find APT5010JLLU2
  • Microsemi

  • Microsemi APT5010JLLU2
  • APT5010JLLU2 PDF Datasheet
  • APT5010JLLU2 Stock

  • APT5010JLLU2 Pinout
  • Datasheet APT5010JLLU2
  • APT5010JLLU2 Supplier

  • Microsemi Distributor
  • APT5010JLLU2 Price
  • APT5010JLLU2 Distributor

APT5010JLLU2 Specifications

ManufacturerMicrosemi Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 23A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs96nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4360pF @ 25V
FET Feature-
Power Dissipation (Max)378W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227
Package / CaseSOT-227-4, miniBLOC

The Products You May Be Interested In

STI11NM60ND

STMicroelectronics

Manufacturer

STMicroelectronics

Series

FDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

450mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 50V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

STF22NM60ND

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, FDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

220mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 50V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

FQA65N20

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

65A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

32mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7900pF @ 25V

FET Feature

-

Power Dissipation (Max)

310W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

APT58F50J

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

65mOhm @ 42A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

340nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

13500pF @ 25V

FET Feature

-

Power Dissipation (Max)

540W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

ISOTOP®

Package / Case

SOT-227-4, miniBLOC

IRFZ14STRLPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 43W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

FM24W256-GTR

FM24W256-GTR

Cypress Semiconductor

IC FRAM 256K I2C 1MHZ 8SOIC

XC95144-15TQ100I

XC95144-15TQ100I

Xilinx

IC CPLD 144MC 15NS 100TQFP

NTJD5121NT1G

NTJD5121NT1G

ON Semiconductor

MOSFET 2N-CH 60V 0.295A SOT363

PIC18LF1320-I/P

PIC18LF1320-I/P

Microchip Technology

IC MCU 8BIT 8KB FLASH 18DIP

PESD0402-140

PESD0402-140

Littelfuse

TVS DIODE 14V 40V 0402

2843010402

2843010402

Fair-Rite Products

FERRITE CORE MULTI-APERTURE

RRH050P03TB1

RRH050P03TB1

Rohm Semiconductor

MOSFET P-CH 30V 5A SOP8

MAX8556ETE+T

MAX8556ETE+T

Maxim Integrated

IC REG LINEAR POS ADJ 4A 16TQFN

NC7WZ17P6X

NC7WZ17P6X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6

C5750X7S2A106K230KE

C5750X7S2A106K230KE

TDK

CAP CER 10UF 100V X7S 2220

2N6433

2N6433

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

74HC04D

74HC04D

Toshiba Semiconductor and Storage

IC INVERTER 6CH 6-INP 14SOIC