Microsemi Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerMicrosemi Corporation
Records 2,560
Page 76/86
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE SCHOTTKY 100V 1A DO204AL |
7,974 |
|
- | Schottky | 100V | 1A | 830mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 1A DO204AL |
3,366 |
|
- | Schottky | 40V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 45V 1A DO204AL |
6,498 |
|
- | Schottky | 45V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 50V 1A DO204AL |
8,478 |
|
- | Schottky | 50V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 75MA DO35 |
8,136 |
|
- | Standard | 50V | 75mA | 1V @ 75mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AA, DO-7, Axial | DO-35 | -65°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 175V 100MA DO7 |
5,634 |
|
- | Standard | 175V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 175V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 200MA DO35 |
6,822 |
|
- | Standard | 75V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 70V 150MA DO35 |
6,210 |
|
- | Standard | 70V | 150mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 70V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 150MA DO35 |
5,292 |
|
- | Standard | 200V | 150mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 200V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
6,030 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
6,552 |
|
- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A AXIAL |
5,562 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
5,850 |
|
- | Standard | 800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A AXIAL |
8,838 |
|
- | Standard | 1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 200MA DO35 |
6,372 |
|
- | Standard | 75V | 200mA | 1V @ 30mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 150MA DO34 |
3,114 |
|
- | Standard | 50V | 150mA | 880mV @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | - | Through Hole | DO-204AG, DO-34, Axial | DO-34 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SWITCHING |
5,814 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
6,976 |
|
- | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 4KV 100MA AXIAL |
7,020 |
|
- | Standard | 4000V | 100mA | 10V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 4000V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 5KV 100MA AXIAL |
6,012 |
|
- | Standard | 5000V | 100mA | 10V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 5000V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 10KV 100MA SAXIAL |
3,474 |
|
- | Standard | 10000V | 100mA | 10V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 10000V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 3A AXIAL |
8,262 |
|
- | Standard | 400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 2µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 3A D5B |
3,852 |
|
- | Standard | 50V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 50V | - | Surface Mount | E-MELF | D-5B | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
8,892 |
|
- | Standard | 800V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 500nA @ 800V | 20pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 1A AXIAL |
7,866 |
|
- | Standard | 75V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 75V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 1A AXIAL |
7,146 |
|
- | Standard | 125V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 125V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 3A B-MELF |
5,238 |
|
- | Standard | 50V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 20V 3A B-MELF |
6,516 |
|
- | Schottky | 20V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 20V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 125°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 30V 3A B-MELF |
6,372 |
|
- | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 850MA AXIAL |
2,610 |
|
- | Standard | 50V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 50V | - | Through Hole | A, Axial | - | -65°C ~ 155°C |