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Microsemi Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerMicrosemi Corporation
Records 2,560
Page 75/86
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
JAN1N6622
Microsemi
DIODE GEN PURP 660V 2A AXIAL
7,632
Military, MIL-PRF-19500/585
Standard
660V
2A
1.6V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 660V
10pF @ 10V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 150°C
JAN1N6626
Microsemi
DIODE GEN PURP 220V 1.75A AXIAL
3,798
Military, MIL-PRF-19500/590
Standard
220V
1.75A
1.35V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 220V
40pF @ 10V, 1MHz
Through Hole
E, Axial
-
-65°C ~ 150°C
JAN1N6626US
Microsemi
DIODE GEN PURP 220V 1.75A D5B
3,888
Military, MIL-PRF-19500/590
Standard
220V
1.75A
1.35V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 220V
40pF @ 10V, 1MHz
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 150°C
JAN1N6627
Microsemi
DIODE GEN PURP 440V 1.75A AXIAL
7,992
Military, MIL-PRF-19500/590
Standard
440V
1.75A
1.35V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 440V
40pF @ 10V, 1MHz
Through Hole
E, Axial
-
-65°C ~ 150°C
JAN1N6627US
Microsemi
DIODE GEN PURP 440V 1.75A D5B
8,658
Military, MIL-PRF-19500/590
Standard
440V
1.75A
1.35V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 440V
40pF @ 10V, 1MHz
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 150°C
JAN1N6628
Microsemi
DIODE GEN PURP 660V 1.75A AXIAL
6,714
Military, MIL-PRF-19500/590
Standard
660V
1.75A
1.35V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 600V
-
Through Hole
E, Axial
-
-65°C ~ 175°C
JAN1N6629
Microsemi
DIODE GEN PURP 880V 1.4A AXIAL
8,766
Military, MIL-PRF-19500/590
Standard
880V
1.4A
1.4V @ 1.4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
2µA @ 800V
-
Through Hole
E, Axial
-
-65°C ~ 175°C
JAN1N6631
Microsemi
DIODE GEN PURP 1.1KV 1.4A AXIAL
4,482
Military, MIL-PRF-19500/590
Standard
1100V
1.4A
1.6V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
2µA @ 1000V
-
Through Hole
E, Axial
-
-65°C ~ 175°C
JANTX1N5419US
Microsemi
DIODE GEN PURP 500V 3A D5B
2,538
Military, MIL-PRF-19500/411
Standard
500V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
1µA @ 500V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
JANTX1N6624US
Microsemi
DIODE GEN PURP 990V 1A D5A
6,408
Military, MIL-PRF-19500/585
Standard
990V
1A
1.55V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
500nA @ 990V
10pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
JANTXV1N4248
Microsemi
DIODE GEN PURP 800V 1A AXIAL
2,322
Military, MIL-PRF-19500/286
Standard
800V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
5µs
1µA @ 800V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
JANTXV1N5415US
Microsemi
DIODE GEN PURP 50V 3A D5B
6,480
Military, MIL-PRF-19500/411
Standard
50V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 50V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
JANTXV1N5416
Microsemi
DIODE GEN PURP 100V 3A AXIAL
7,686
Military, MIL-PRF-19500/411
Standard
100V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 100V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JANTXV1N5419
Microsemi
DIODE GEN PURP 500V 3A AXIAL
6,930
Military, MIL-PRF-19500/411
Standard
500V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 500V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JANTXV1N5616US
Microsemi
DIODE GEN PURP 400V 1A D5A
5,994
Military, MIL-PRF-19500/429
Standard
400V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 400V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C
JANTXV1N5621US
Microsemi
DIODE GEN PURP 800V 1A D5A
4,788
Military, MIL-PRF-19500/429
Standard
800V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
500nA @ 800V
20pF @ 12V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
JANTXV1N5802
Microsemi
DIODE GEN PURP 50V 1A AXIAL
2,808
Military, MIL-PRF-19500/477
Standard
50V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 50V
25pF @ 10V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
JANTXV1N5802US
Microsemi
DIODE GEN PURP 50V 1A D5A
7,452
Military, MIL-PRF-19500/477
Standard
50V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 50V
25pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
JANTXV1N5804US
Microsemi
DIODE GEN PURP 100V 1A D5A
6,138
Military, MIL-PRF-19500/477
Standard
100V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 100V
25pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
JANTXV1N5807US
Microsemi
DIODE GEN PURP 50V 3A D5B
8,928
Military, MIL-PRF-19500/477
Standard
50V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 50V
60pF @ 10V, 1MHz
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
JANTXV1N6622US
Microsemi
DIODE GEN PURP 660V 1.2A D5A
6,516
Military, MIL-PRF-19500/585
Standard
660V
1.2A
1.4V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 660V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
JANTXV1N6625
Microsemi
DIODE GEN PURP 1.1KV 1A D5A
8,424
Military, MIL-PRF-19500/585
Standard
1100V
1A
1.75V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
1µA @ 1100V
-
Through Hole
A, Axial
A-PAK
-65°C ~ 150°C
JANTXV1N6626US
Microsemi
DIODE GEN PURP 220V 1.75A D5B
3,726
Military, MIL-PRF-19500/590
Standard
220V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 220V
40pF @ 10V, 1MHz
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 150°C
JANTXV1N6627
Microsemi
DIODE GEN PURP 440V 1.75A AXIAL
7,182
Military, MIL-PRF-19500/590
Standard
440V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 440V
40pF @ 10V, 1MHz
Through Hole
E, Axial
-
-65°C ~ 150°C
JANTXV1N6628US
Microsemi
DIODE GEN PURP 660V 1.75A D5B
5,796
Military, MIL-PRF-19500/590
Standard
660V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 660V
40pF @ 10V, 1MHz
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 150°C
JANTXV1N6629
Microsemi
DIODE GEN PURP 880V 1.4A AXIAL
4,050
Military, MIL-PRF-19500/590
Standard
880V
1.4A
1.4V @ 1.4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
2µA @ 880V
40pF @ 10V, 1MHz
Through Hole
E, Axial
-
-65°C ~ 150°C
MSG104
Microsemi
DIODE SCHOTTKY 40V 1A DO204AL
5,166
-
Schottky
40V
1A
690mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
MSG105
Microsemi
DIODE SCHOTTKY 50V 1A DO204AL
7,632
-
Schottky
50V
1A
690mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
MSG106
Microsemi
DIODE SCHOTTKY 60V 1A DO204AL
7,218
-
Schottky
60V
1A
690mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
MSG109
Microsemi
DIODE SCHOTTKY 90V 1A DO204AL
6,210
-
Schottky
90V
1A
810mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C