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Littelfuse Transistors - FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerLittelfuse Inc.
Records 5
Page 1/1
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
LSIC1MO120E0120
Littelfuse
SIC MOSFET 1200V 27A TO247-3
17,532
-
N-Channel
SiCFET (Silicon Carbide)
1200V
27A (Tc)
20V
150mOhm @ 14A, 20V
4V @ 7mA
80nC @ 20V
+22V, -6V
1125pF @ 800V
-
139W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
LSIC1MO170E1000
Littelfuse
MOSFET SIC 1700V N-CH TO-247-3L
6,972
-
N-Channel
SiCFET (Silicon Carbide)
1700V
5A (Tc)
15V, 20V
1Ohm @ 2A, 20V
4V @ 1mA
15nC @ 20V
+22V, -6V
200pF @ 1000V
-
54W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3L
TO-247-3
LSIC1MO120E0080
Littelfuse
MOSFET SIC 1200V 39A TO247-3
3,852
-
N-Channel
SiCFET (Silicon Carbide)
1200V
39A (Tc)
20V
100mOhm @ 20A, 20V
4V @ 10mA
95nC @ 20V
+22V, -6V
1825pF @ 800V
-
179W (Tc)
-55°C ~ 150°C
Through Hole
TO-247-3
TO-247-3
LSIC1MO120E0160
Littelfuse
SIC MOSFET 1200V 22A TO247-3
4,194
-
N-Channel
SiCFET (Silicon Carbide)
1200V
22A (Tc)
20V
200mOhm @ 10A, 20V
4V @ 5mA
57nC @ 20V
+22V, -6V
870pF @ 800V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
SYC0102BLT1G
Littelfuse
SCR 0.25A GATE SCR
2,898
*
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