Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 57/225
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 100V 1.7A SOT-223 |
4,212 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1.8A (Ta) | 10V | 240mOhm @ 1.8A, 10V | 4V @ 218µA | 9.3nC @ 10V | ±20V | 265pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 100V 0.68A SOT223 |
2,538 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 680mA (Ta) | 4.5V, 10V | 1.8Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | ±20V | 146pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 2.6A |
8,082 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 2.6A (Tj) | 4.5V, 10V | 90mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | ±20V | 380pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 30V 15A 8-SOIC |
3,996 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 7.2mOhm @ 15A, 10V | 2.4V @ 50µA | 98nC @ 10V | ±20V | 2590pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO-252 |
4,536 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6.1mOhm @ 50A, 10V | 2V @ 40µA | 22nC @ 5V | ±20V | 2800pF @ 15V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 12V 15A 8-SOIC |
2,934 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 15A (Ta) | 2.8V, 4.5V | 8mOhm @ 15A, 4.5V | 1.9V @ 250µA | 40nC @ 4.5V | ±12V | 2550pF @ 6V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 17.2A 8-SOIC |
4,698 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 17.2A (Ta) | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36nC @ 4.5V | ±20V | 2910pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 60V 1.9A SOT223 |
7,182 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 10V | 300mOhm @ 1.9A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 410pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 12A 5X6 PQFN |
2,862 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 35A (Tc) | 4.5V, 10V | 12.8mOhm @ 16.2A, 10V | 2.35V @ 25µA | 10nC @ 10V | ±20V | 790pF @ 10V | - | 3.2W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 12V 16A 8-SOIC |
4,014 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 16A (Ta) | 1.8V, 4.5V | 7mOhm @ 16A, 4.5V | 900mV @ 250µA | 91nC @ 4.5V | ±8V | 8676pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8 |
2,088 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 40A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 2V @ 250µA | 46nC @ 10V | ±20V | 3600pF @ 15V | - | 2.1W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 71A DPAK |
4,248 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 56A (Tc) | 6V, 10V | 7.9mOhm @ 43A, 10V | 3.7V @ 100µA | 87nC @ 10V | ±20V | 3020pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 240V 350MA SOT223 |
3,762 |
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SIPMOS™ | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | ±20V | 108pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 80V 45A |
5,166 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 45A (Tc) | 6V, 10V | 13.5mOhm @ 45A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1730pF @ 40V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 40A TDSON-8 |
2,214 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 14.6A (Ta), 40A (Tc) | 4.5V, 10V | 7.9mOhm @ 40A, 10V | 2V @ 30µA | 17nC @ 5V | ±20V | 2230pF @ 15V | - | 2.8W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 80A D2PAK |
7,740 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 80A (Tc) | 4.5V, 10V | 3.9mOhm @ 55A, 10V | 2V @ 60µA | 32nC @ 5V | ±20V | 3877pF @ 15V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 55V 12A D2PAK |
5,706 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 12A (Tc) | 10V | 175mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO263-3 |
6,786 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 34µA | 36nC @ 10V | ±20V | 2900pF @ 30V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 30V 11A 8-SOIC |
3,420 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 13.5mOhm @ 11A, 10V | 2.5V @ 250µA | 110nC @ 10V | ±20V | 4030pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 25V 17A DIRECTFET-S1 |
3,582 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 17A (Ta), 63A (Tc) | 4.5V, 10V | 3.8mOhm @ 17A, 10V | 2.35V @ 25µA | 20nC @ 4.5V | ±20V | 1810pF @ 13V | - | 1.8W (Ta), 26W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK |
7,110 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | 3V @ 250µA | 36nC @ 5V | ±16V | 1620pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 40A TSDSON-8 |
6,822 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 10V | 4.2mOhm @ 20A, 10V | 4V @ 36µA | 46nC @ 10V | ±20V | 3700pF @ 20V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 80V 38A DPAK |
7,488 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 38A (Tc) | 10V | 29mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 1710pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V 18.7A TO-263 |
7,488 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 18.7A (Ta) | 10V | 130mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | ±20V | 860pF @ 25V | - | 81.1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET SB |
8,046 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.1A (Ta), 14.4A (Tc) | 10V | 62mOhm @ 8.9A, 10V | 5V @ 25µA | 13nC @ 10V | ±20V | 515pF @ 25V | - | 2.4W (Ta), 30W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET SB | DirectFET™ Isometric SB |
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Infineon Technologies |
MOSFET N-CH 40V 21A 8TDSON |
5,976 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 21A (Ta), 98A (Tc) | 4.5V, 10V | 3.2mOhm @ 50A, 10V | 2V @ 250µA | 25nC @ 10V | ±20V | 1800pF @ 20V | - | 2.5W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 80A D2PAK |
4,122 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 80A (Tc) | 4.5V, 10V | 3.9mOhm @ 55A, 10V | 2V @ 60µA | 32nC @ 5V | ±20V | 3877pF @ 15V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 100A 8TDSON-34 |
8,604 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 7V, 10V | 2.8mOhm @ 50A, 10V | 3.4V @ 30µA | 45nC @ 10V | ±20V | 2600pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 8.3A 8-SOIC |
5,292 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 8.3A (Ta) | 10V | 18mOhm @ 8.3A, 10V | 4.9V @ 100µA | 39nC @ 10V | ±20V | 1640pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 40V 24A PQFN |
8,280 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 100A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 100µA | 80nC @ 10V | ±20V | 3120pF @ 25V | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |