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IPC100N04S52R8ATMA1

IPC100N04S52R8ATMA1

For Reference Only

Part Number IPC100N04S52R8ATMA1
PNEDA Part # IPC100N04S52R8ATMA1
Description MOSFET N-CH 40V 100A 8TDSON-34
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,604
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPC100N04S52R8ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPC100N04S52R8ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPC100N04S52R8ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 25V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-34
Package / Case8-PowerTDFN

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Gate Charge (Qg) (Max) @ Vgs

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Package / Case

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