Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 20/225
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 200V 31A TO-220AB |
18,408 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 31A (Tc) | 10V | 82mOhm @ 18A, 10V | 5.5V @ 250µA | 107nC @ 10V | ±30V | 2370pF @ 25V | - | 3.1W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 130A TO-220AB |
16,008 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 130A (Tc) | 10V | 7.8mOhm @ 78A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 5600pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 160A D2PAK-7 |
16,608 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 160A (Tc) | 10V | 2.6mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7820pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 150V 83A TO263-3 |
64,404 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 83A (Tc) | 8V, 10V | 10.8mOhm @ 83A, 10V | 4V @ 160µA | 55nC @ 10V | ±20V | 3230pF @ 75V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 180A TO263-7-3 |
123,588 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 0.98mOhm @ 100A, 10V | 4V @ 230µA | 286nC @ 10V | ±20V | 22880pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET P-CH 55V 42A TO-262 |
21,486 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3500pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 195A D2PAK |
14,478 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 8970pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 30V 80A TO220-3 |
12,072 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2V @ 253µA | 160nC @ 10V | +5V, -16V | 11300pF @ 25V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 150V 27A TO-220AB |
14,538 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 2210pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 130A D2PAK |
17,904 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 7670pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 557A D2PAK |
17,064 |
|
StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 557A (Tc) | 4.5V, 10V | 0.65mOhm @ 100A, 10V | 2.4V @ 250µA | 307nC @ 4.5V | ±20V | 19680pF @ 25V | - | 416W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 24V 195A TO220AB |
15,978 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 195A (Tc) | 10V | 1.5mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 7590pF @ 24V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V DIRECTFET L8 |
34,878 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 26A (Ta), 375A (Tc) | 10V | 2.3mOhm @ 96A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 12222pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 250V 45A D2PAK |
17,688 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 45A (Tc) | 10V | 48mOhm @ 26A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4560pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 57A TO-247AC |
17,064 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 25mOhm @ 28A, 10V | 4V @ 250µA | 190nC @ 10V | ±20V | 3000pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET P-CH 100V 38A TO-262 |
17,106 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 2780pF @ 25V | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 200V 50A TO-247AC |
12,618 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 50A (Tc) | 10V | 40mOhm @ 28A, 10V | 4V @ 250µA | 234nC @ 10V | ±20V | 4057pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 55V 110A TO-247AC |
100,092 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 8mOhm @ 59A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 4000pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET L8 |
32,124 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 375A (Tc) | 10V | 3.5mOhm @ 74A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 11560pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220 |
54,744 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 7.6A, 10V | 4.5V @ 630µ | 11nC @ 10V | ±20V | 1750pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 75A TO-220AB |
31,638 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 160A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 270nC @ 10V | ±20V | 7500pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 40V 195A TO220 |
21,240 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 14240pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 75A TO-220AB |
25,242 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 14mOhm @ 45A, 10V | 5.5V @ 250µA | 170nC @ 10V | ±20V | 6160pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO-220AB |
18,552 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6920pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 83A TO-220AB |
22,002 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4460pF @ 50V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
19,296 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | 2180pF @ 400V | - | 129W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 26A TO-220FP |
33,564 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 26A (Tc) | 10V | 25mOhm @ 17A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4600pF @ 25V | - | 46W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 200V 34A TO220-3 |
26,544 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 34A (Tc) | 10V | 32mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V D2PAK-3 |
13,698 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.3mOhm @ 100A, 10V | 4.1V @ 150µA | 102nC @ 10V | ±20V | 460pF @ 50V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V 11A TO220FP |
35,442 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 85nC @ 10V | ±20V | 1600pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |