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IPB033N10N5LFATMA1

IPB033N10N5LFATMA1

For Reference Only

Part Number IPB033N10N5LFATMA1
PNEDA Part # IPB033N10N5LFATMA1
Description MOSFET N-CH 100V D2PAK-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 13,698
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 19 - Apr 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB033N10N5LFATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB033N10N5LFATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB033N10N5LFATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™-5
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs102nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds460pF @ 50V
FET Feature-
Power Dissipation (Max)179W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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